High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

High voltage „450 V... GaN Schottky rectifiers

We fabricated high standoff voltage ~450 V! Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO2 layer. The best devices were characterized by an ON-state voltage of 4.2 V at a curr...

Hydrogen sensors based on Pt-AlGaN/AlN/GaN schottky diode

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860°C for 30 s in N2 ambience. Both the forward and reverse current of the device increased g...

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers

AlGaN/GaN Schottky Barrier Diodes Employing Diamond-like Carbon passivation

AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...

Breakdown Voltage of High-voltage GaN FETs

GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...